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NTTFS4840N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
6.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
19.4
15.8
1.7
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 20 A
T J = 25 ° C
T J = 125 ° C
0.96
0.87
1.2
V
Reverse Recovery Time
t RR
12.5
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 20 A
7.7
4.8
Reverse Recovery Charge
Q RR
4.4
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.20
1.5
Gate Resistance
R G
2.0
3.0
W
5. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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